Philip Rutter

Title: Philip Rutter and Semiconductor Device Innovation.

Introduction

Philip Rutter is an inventor associated with Bethlehem, Pennsylvania, and Ideal Semiconductor Devices, Inc. His patent work addresses semiconductor device design, with a focus on charge balance and edge termination.

Latest Patents

Rutter is associated with 1 patent: “Combined Charge Balance and Edge Termination Surface Passivation for a Semiconductor Device and Methods of Fabricating the Same.” The invention describes a semiconductor device with an epitaxial layer on a semiconductor substrate. The layer has an active region containing at least one active element and a laterally adjacent edge termination region containing at least one edge termination structure.

A charged layer covers at least part of the active region and extends over at least part of the edge termination region. The design may include active trenches and an edge trench. The charged layer can be deposited on the trench sidewalls using atomic layer deposition in the same processing step.

Career Highlights

Rutter’s listed patent reflects work on integrating charge balance and edge termination with surface passivation in semiconductor devices. The described fabrication approach uses a shared atomic layer deposition step for charged layers on active and edge trenches.

Collaborations

Rutter’s listed coworkers include David Jauregui and Stanislav Soloviev. The patent information provided connects his work with Ideal Semiconductor Devices, Inc.

Conclusion

Philip Rutter’s patent focuses on a semiconductor structure and fabrication method that combine charge balance, edge termination, and surface passivation.