Philip J McNally

Title: The Innovations of Philip J McNally

Introduction

Philip J McNally is a notable inventor based in Woodbine, MD (US). He has made significant contributions to the field of technology, particularly in the development of advanced materials and methods. With a total of 2 patents, McNally's work has had a lasting impact on various applications.

Latest Patents

McNally's latest patents include innovations in thin film vanadium oxide spatial light modulators. These patents detail vanadium dioxide (VO.sub.2) based infrared spatial light modulators (SLM) in four embodiments. Additionally, he has developed a method of making field-effect transistors (FETs) in gallium arsenide (GaAs) through dual species implantation of silicon. This method involves preparing an active surface layer on a semi-insulating GaAs substrate by ion implanting a surface layer with silicon to form an n-type active layer. Furthermore, a buried diffusion layer beneath the active layer is ion implanted with boron to prevent defects in the substrate from influencing the active region. This method is particularly useful for GaAs MESFETs.

Career Highlights

Throughout his career, McNally has worked with prestigious organizations such as Johns Hopkins University and Communications Satellite Corporation. His experience in these institutions has allowed him to collaborate on various innovative projects and contribute to advancements in technology.

Collaborations

Some of McNally's notable coworkers include David W Blodgett and Charles H Lange. Their collaborative efforts have further enhanced the quality and impact of their work in the field.

Conclusion

Philip J McNally's contributions to technology through his patents and collaborations highlight his role as an influential inventor. His work continues to inspire advancements in materials and methods that benefit various industries.