The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1986
Filed:
Mar. 13, 1984
Applicant:
Inventor:
Philip J McNally, Woodbine, MD (US);
Assignee:
Communications Satellite Corporation, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 2957 / ; 148187 ; 148D / ; 357 91 ;
Abstract
A method of preparing an active surface layer on a semi-insulating GaAs substrate comprising the steps of ion implanting a surface layer with silicon to form an n-type active layer and ion implanting a buried diffusion layer beneath the active layer with boron to prevent defects in the substrate from influencing the active region. The method is particularly useful for GaAs MESFETs.