Philip A Saunders

Title: Innovations by Philip A. Saunders

Introduction

Philip A. Saunders is a notable inventor based in Millwood, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on the development of high-quality strained-semiconductor substrates.

Latest Patents

Among his latest patents, Saunders has developed methods for the preparation of high-quality strained-semiconductor directly-on-insulator substrates. One of his notable inventions describes a technique for achieving a substantially defect-free SGOI substrate, which includes a SiGe layer with a high Ge content of greater than about 25 atomic %. This method utilizes a low-temperature wafer bonding technique. Additionally, he has described a method for forming thin to ultra-thin strain Si, SiC, or SiC/Si layers directly on insulator substrates, which possess a strain content in the range of about 1-5%. Another significant patent focuses on creating defect-free high Ge content SiGe-on-insulator substrates using wafer bonding techniques, which includes an initial prebonding annealing step to form a bonding interface comprising elements of Si, Ge, and O.

Career Highlights

Philip A. Saunders is currently associated with International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Saunders has collaborated with notable colleagues, including Jack Oon Chu and Leathen Shi. These collaborations have further enriched his research and development efforts.

Conclusion

Philip A. Saunders is a distinguished inventor whose work in semiconductor technology has led to significant advancements. His innovative patents and collaborations continue to influence the industry and pave the way for future developments.