The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Apr. 23, 2007
Jack O. Chu, Manhasset Hills, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
Philip A. Saunders, Millwood, NY (US);
Leathen Shi, Yorktown Heights, NY (US);
Jack O. Chu, Manhasset Hills, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
Philip A. Saunders, Millwood, NY (US);
Leathen Shi, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. Similarly, a method for forming thin to ultra-thin strain Si, SiC, or SiC/Si layers directly on insulator substrates having a strain content in the range of about 1-5% is further described.