Kyungki-Do, South Korea

Phil Goo Kong

This inventor holds 1 USPTO granted patent. Top assignee: Hyundai Electronics Industries Co. Ltd.. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Phil Goo Kong. Retrieved from https://idiyas.com/inventor/phil-goo-kong-hedobwdh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Phil Goo Kong and Semiconductor Device Fabrication

Introduction

Phil Goo Kong is an inventor associated with Kyungki-Do, South Korea. His work includes a patented method for fabricating semiconductor devices using an etch-resistant polymer. He is associated with Hyundai Electronics Industries Co. Ltd.

Latest Patents

Kong’s listed patent, “Method for Fabricating Semiconductor Device by Using Etching Polymer,” describes generating a polymer layer in situ on exposed surfaces of a photoresist pattern, pad oxide film, and hard mask layer. The polymer serves as a protective film during trench etching, helping prevent photoresist erosion and improve etch selectivity. The method supports easier formation of trench structures with improved dimensional control. The supplied information lists 1 patent for Kong.

Career Highlights

Kong’s patent focuses on a fabrication technique intended to address photoresist erosion and etching control in semiconductor manufacturing. His association with Hyundai Electronics Industries Co. Ltd. connects his work to the semiconductor industry.

Collaborations

Ho Seok Lee and Won Soung Park are identified as Kong’s coworkers. The provided information does not specify their roles in the patent or the invention.

Conclusion

Phil Goo Kong’s listed invention applies an etch-resistant polymer to improve trench etching and dimensional control in semiconductor device fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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