The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Jan. 02, 2001
Applicant:
Inventors:
Won Soung Park, Kyoungki-do, KR;
Phil Goo Kong, Kyoungki-do, KR;
Ho Seok Lee, Seoul, KR;
Dong Duk Lee, Kyoungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/13065 ; H01L 2/1308 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/13065 ; H01L 2/1308 ;
Abstract
The present invention discloses a method for fabricating a semiconductor device using an etch-resistant polymer. The method includes a step for the in-situ generation of a polymer layer on the exposed surfaces of a photoresist film pattern, a pad oxide film, and a hard mask layer. This polymer acts as a protective film and prevents photoresist erosion during trench etching processes and improves the etch selectivity. As a result, trench structures can be formed more easily and with improved dimensional control.