Company Filing History:
Years Active: 2025
Title: **Innovator Phaik Lynn Leong: Pioneering Advances in Semiconductor Technology**
Introduction
Phaik Lynn Leong, based in Singapore, is a noteworthy inventor recognized for his contributions to the semiconductor field. With a focus on enhancing 3D NAND technology, Leong's innovative work at Applied Materials, Inc. has positioned him as a significant figure in the evolution of semiconductor manufacturing.
Latest Patents
Leong holds a patent involving "Modified stacks for 3D NAND". This patent outlines exemplary methods of forming semiconductor structures, which include creating a silicon oxide layer from a silicon-containing precursor combined with an oxygen-containing precursor. Additionally, it details the formation of a silicon nitride layer, characterized by an oxygen concentration greater than or about 5 at.%. The processes described contribute to the development of alternating layers of silicon oxide and silicon nitride which are crucial for optimizing 3D NAND performance.
Career Highlights
Throughout his career, Phaik Lynn Leong has made significant strides at Applied Materials, Inc. His expertise in semiconductor technologies has enabled the company to enhance its product offerings, contributing to the advancement of digital storage solutions. His innovative methods are expected to impact various applications in the tech industry.
Collaborations
In his endeavors, Leong has collaborated with distinguished colleagues, including Xinhai Han and Hang Yu. These collaborations have been instrumental in fostering a creative environment leading to groundbreaking developments in semiconductor technology.
Conclusion
Phaik Lynn Leong's contributions to the field of semiconductors through his inventive methods exemplify the vital role of innovation in technology. His work not only strengthens his company's position in the market but also represents a significant advancement in the future of data storage solutions. As the industry continues to evolve, Leong's patent illustrates a promising direction for 3D NAND technologies.