The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Aug. 06, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Xinhai Han, Santa Clara, CA (US);
Hang Yu, San Jose, CA (US);
Kesong Hu, Pleasanton, CA (US);
Kristopher R. Enslow, Carlsbad, CA (US);
Masaki Ogata, San Jose, CA (US);
Wenjiao Wang, San Jose, CA (US);
Chuan Ying Wang, Sunnyvale, CA (US);
Chuanxi Yang, Los Altos, CA (US);
Joshua Maher, Sunnyvale, CA (US);
Phaik Lynn Leong, Singapore, SG;
Grace Qi En Teong, Singapore, SG;
Alok Jain, Singapore, SG;
Nagarajan Rajagopalan, Santa Clara, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
SeoYoung Lee, Hwaseong-si, KR;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.