Applied Materials, Inc.

Phaik Lynn Leong

Deenesh Padhi

Xinhai Han

Nagarajan Rajagopalan

Hang Yu

Masaki Ogata

Wenjiao Wang

Kristopher R Enslow

Alok Jain

Chuanxi Yang

Chuan Ying Wang

Joshua Maher

Kesong Hu

SeoYoung Lee

Grace Qi En Teong

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Modified stacks for 3D NAND

Growing community of inventors

Singapore, Singapore

Phaik Lynn Leong