Stenhamra, Sweden

Peter Olofsson

This inventor holds 2 USPTO granted patents. Top assignees: Infineon Technologies Ag, Telefonaktiebolaget Lm Ericsson (Publ). Active years: 2004-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peter Olofsson. Retrieved from https://idiyas.com/inventor/peter-olofsson-lffu5zi7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 36(Granted Patents)


Company Filing History:


Years Active: 2004-2006

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2 patents (USPTO):Explore Patents

Title: The Innovations of Peter Olofsson: A Pioneer in High Voltage Transistors

Introduction

Peter Olofsson, an inventive mind hailing from Stenhamra, Sweden, has made significant contributions in the field of high voltage transistor technology. With a total of two patents to his name, Olofsson has been a driving force in enhancing manufacturing processes that benefit both performance and cost-effectiveness in the semiconductor industry.

Latest Patents

Olofsson's most recent patents include a groundbreaking method to manufacture high voltage MOS transistors through ion implantation. This method combines a deep n-well and p-well process to create a channel region that is well-aligned with the gate edge. The outcome is a high-voltage, high-frequency MOS-transistor that not only reduces manufacturing costs but also significantly increases breakdown voltage and overall performance while preventing the 'body effect' through p-well isolation.

Another notable patent involves the integration of high voltage self-aligned MOS components. This innovation allows for the formation of both high voltage NMOS transistors and low voltage counterparts within a standard n-well CMOS process. Olofsson's method requires just two additional steps—masking and ion implantation—thus providing an efficient technique for creating a doped channel region aligned with the transistor gate's edge.

Career Highlights

Throughout his career, Olofsson has worked with some renowned companies in the industry, including Telefonaktiebolaget LM Ericsson and Infineon Technologies AG. His experience in these companies has undoubtedly shaped his innovative approach to technology and manufacturing.

Collaborations

Peter Olofsson has collaborated with talented peers such as Anders Söderbärg and Andrej Litwin. These collaborations have fostered a creative environment, enabling the exchange of ideas and the pursuit of excellence in semiconductor technology.

Conclusion

In conclusion, Peter Olofsson's contributions to high voltage transistor technology underscore his status as a remarkable inventor. With his innovative patents and collaborative spirit, Olofsson continues to influence the semiconductor industry while paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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