The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
May. 25, 2004
Peter Olofsson, Stenhamra, SE;
Peter Olofsson, Stenhamra, SE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabrication of a high-voltage, high-frequency MOS-transistor combines a deep n-well and a p-well process and the formation of an extended drain region (), and a channel region (), the channel having a short length and becoming well aligned with the gate edge. The deep n-well () and the p-well () are both produced by ion implantation. The method is compatible with a standard CMOS process and gives low manufacturing costs, increased breakdown voltage, better overall high-frequency performance, and the prevention of the 'body effect' occurring by isolation of the p-well.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile