This inventor holds 2 USPTO granted patents. Top assignees: Polar Semiconductor, Inc., Sky Water Technology Foundry, Inc.. Active years: 2017-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2017-2026
Title: Innovations by Peter N Manos, II
Introduction
Peter N Manos, II is an accomplished inventor based in Eden Prairie, MN (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method that enhances the etching process in circuit-device manufacturing.
Latest Patents
Peter N Manos, II holds 1 patent for his invention titled "Method of controlling etch-pattern density and device made using such method." This patent describes a method for controlling the etch-pattern density of a polysilicon layer. The process involves depositing polysilicon on a wafer and determining polysilicon-etch regions that include DMOS source regions within circuit-device areas. The method calculates the etch area of these regions and ensures it meets a predetermined minimum threshold. If the calculated area is insufficient, additional polysilicon-etch regions are added to facilitate automatic process control during the etching step.
Career Highlights
Peter N Manos, II is currently associated with Polar Semiconductor, Inc. His work at the company focuses on advancing semiconductor manufacturing techniques. His innovative methods have the potential to improve efficiency and precision in the production of electronic devices.
Conclusion
Peter N Manos, II is a notable inventor whose work in semiconductor technology has led to valuable advancements in etching processes. His contributions continue to influence the industry positively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile