Plano, TX, United States of America

Peter Huang

This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peter Huang. Retrieved from https://idiyas.com/inventor/peter-huang-fxorsgk6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Innovations by Inventor Peter Huang

Introduction

Peter Huang is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance of integrated circuits.

Latest Patents

Peter Huang holds 1 patent for his invention titled "Semiconductor PMD layer dielectric." This patent describes a method of manufacturing a semiconductor wafer where a layer of undoped silicon glass is formed over the front-end structure. Additionally, the invention includes an integrated circuit that features a back-end structure with a dielectric layer containing undoped silicon glass.

Career Highlights

Peter Huang is currently employed at Texas Instruments Corporation, a leading company in semiconductor design and manufacturing. His role at Texas Instruments allows him to work on cutting-edge technologies that drive advancements in the electronics industry.

Collaborations

Peter collaborates with his coworker, Qi-Zhong Hong, to further enhance their research and development efforts in semiconductor technologies.

Conclusion

Peter Huang's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in advancing modern electronics. His contributions continue to shape the future of integrated circuit design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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