The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
May. 29, 2003
Applicant:
Inventors:
Qi-Zhong Hong, Richardson, TX (US);
Peter Huang, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/348 ;
Abstract
An embodiment of the invention is a method of manufacturing a semiconductor wafer where a layer of undoped silicon glass is formed over the front-end structure . Another embodiment of the present invention is an integrated circuit having a back-end structure in which the dielectric layer contains undoped silicon glass.
Hong, Qi-Zhong. (2004). Semiconductor pmd layer dielectric (U.S. Patent No. 6835648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6835648
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile