Dresden, Germany

Peter Hagemeyer

This inventor holds 3 USPTO granted patents and 1 EPO patent. Top assignee: Infineon Technologies Ag. Active years: 2004-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peter Hagemeyer. Retrieved from https://idiyas.com/inventor/peter-hagemeyer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 66.7


Average Co-Inventor Count = 1.5

ph-index = 3

Forward Citations = 39(Granted Patents)


Company Filing History:


Years Active: 2004-2010

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3 patents (USPTO):Explore Patents

Title: Peter Hagemeyer: Innovator in Memory Technology

Introduction

Peter Hagemeyer is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on innovative methods for fabricating layer arrangements and enhancing memory cell designs.

Latest Patents

Hagemeyer's latest patents include a method for fabricating a layer arrangement, a layer arrangement, and a memory arrangement. The disclosed embodiments relate to a method for the production of a layer arrangement, where at least one laterally defined first layer sequence is embodied on a first surface area of a substrate. Additionally, at least one laterally defined second layer sequence is embodied on a second surface area of the substrate to produce a layer arrangement. A first side wall, having a first thickness, is produced from a first electrically insulating material on at least one partial area of the side walls of the first and second layer sequences. Furthermore, a second side wall layer, having a second thickness, is produced from a second electrically insulating material on at least one partial area of the first side wall layers, and the second side wall layers are removed from the first layer sequences. Another significant patent is for a flash memory cell with a buried floating gate and a method for operating such a flash memory cell. This programmable read-only memory cell comprises a floating gate arranged in a trench, an epitaxial channel layer formed on the floating gate, connecting a source electrode to a drain electrode, and a selection gate arranged above the channel line.

Career Highlights

Peter Hagemeyer is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to push the boundaries of memory technology and contribute to advancements in the field.

Collaborations

Hagemeyer collaborates with Wolfram Langheinrich, a fellow innovator in the industry. Their partnership has fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Peter Hagemeyer is a distinguished inventor whose work in memory technology has led to several important patents. His contributions continue to shape the future of memory solutions in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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