Peter Grambow

Title: The Innovations of Peter Grambow

Introduction

Peter Grambow is a notable inventor based in Stuttgart, Germany. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of advanced transistor devices that leverage two-dimensional electron systems.

Latest Patents

Peter Grambow holds 1 patent for his innovative method of generating active semiconductor structures. This patent describes a novel unipolar transistor device that is realized from two-dimensional electron systems in modulation-doped AlGaAS/GaAs heterostructures. The design features a 600 nm wide one-dimensional channel, which is insulated laterally from the two-dimensional electron systems by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be adjusted through the in-plane lateral-field effect of the adjacent two-dimensional electron system gates. The vacuum in the etched trenches serves as the dielectric, and the device demonstrates room temperature operation with a transconductance of 161S, corresponding to 160 mS/mm 2D transconductance.

Career Highlights

Peter Grambow is affiliated with the Max Planck Society for the Advancement of Science. His work has been instrumental in advancing semiconductor technology, particularly in the area of unipolar transistors. His innovative approaches have garnered attention in the scientific community.

Collaborations

Peter has collaborated with notable colleagues such as Johannes Nieder and Herbert Lage. Their combined expertise has contributed to the success of their research endeavors.

Conclusion

Peter Grambow's contributions to semiconductor technology exemplify the spirit of innovation in the field. His work continues to influence advancements in electronic devices and materials.