The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1995
Filed:
Jul. 03, 1991
Johannes Nieder, Stuttgart, DE;
Peter Grambow, Stuttgart, DE;
Herbert Lage, Bad Liebenzell, DE;
Klaus Ploog, Stuttgart, DE;
Andreas Wieck, Sindelfingen, DE;
Detlef Heitmann, Borstel-Hohenraden, DE;
Klaus Von Klitzing, Stuttgart, DE;
Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften, Gottingen, DE;
Abstract
A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600 nm wide 1D channel is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 161S transconductance corresponding to 160 mS/mm 2D transconductance.