Detlef Heitmann

Title: The Innovations of Detlef Heitmann

Introduction

Detlef Heitmann is a notable inventor based in Borstel-Hohenraden, Germany. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of advanced electronic devices, particularly in the realm of unipolar transistors.

Latest Patents

Detlef Heitmann holds a patent for a method of generating active semiconductor structures. This innovative approach involves a novel unipolar transistor device realized from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. The design features a 600 nm wide 1D channel, which is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be adjusted through the in-plane lateral-field effect of the adjacent 2DES-gates. The vacuum in the etched trenches serves as the dielectric. Remarkably, room temperature operation has been demonstrated, yielding a transconductance of 161S, which corresponds to 160 mS/mm 2D transconductance.

Career Highlights

Detlef Heitmann is affiliated with the Max Planck Society for the Advancement of Science. His work at this prestigious institution has allowed him to explore and innovate in the field of semiconductor devices. His research has contributed to the understanding and development of advanced electronic components.

Collaborations

Detlef has collaborated with esteemed colleagues such as Johannes Nieder and Peter Grambow. These partnerships have fostered a collaborative environment that enhances the research and development of semiconductor technologies.

Conclusion

Detlef Heitmann's contributions to semiconductor technology through his innovative patent and collaborative efforts highlight his importance in the field. His work continues to influence advancements in electronic devices and materials.