Johannes Nieder

Title: Johannes Nieder: Innovator in Semiconductor Technology

Introduction

Johannes Nieder is a prominent inventor based in Stuttgart, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of generating active semiconductor structures.

Latest Patents

Nieder holds a patent for a novel unipolar transistor device. This device is realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. The design features a 600 nm wide 1D channel that is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates, where the vacuum in the etched trenches serves as the dielectric. Room temperature operation has been demonstrated, yielding a transconductance of 161S, which corresponds to 160 mS/mm 2D transconductance.

Career Highlights

Johannes Nieder is affiliated with the Max Planck Society for the Advancement of Science. His work has been instrumental in advancing semiconductor technology, showcasing his expertise and innovative approach in the field.

Collaborations

Nieder has collaborated with notable colleagues, including Peter Grambow and Herbert Lage. Their joint efforts have contributed to the success of various projects within the semiconductor domain.

Conclusion

Johannes Nieder's contributions to semiconductor technology through his innovative patent and collaborations highlight his role as a key figure in the field. His work continues to influence advancements in semiconductor structures and devices.