Peter C Nagler

Title: Peter C Nagler: Innovator in X-ray Absorber Technology

Introduction

Peter C Nagler is a notable inventor based in College Park, MD (US). He has made significant contributions to the field of low-energy x-ray spectroscopy. His innovative methods have advanced the technology used in x-ray absorbers, which are crucial for various applications in scientific research and medical imaging.

Latest Patents

Peter C Nagler holds a patent titled "Method of fabricating x-ray absorbers for low-energy x-ray spectroscopy." This patent describes a method for forming low-energy x-ray absorbers. The process involves forming sensors on a semiconductor wafer, such as silicon. A seed metal layer, typically gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, also made of gold, are electroplated from the seed pads through a stem mask. An absorber layer, preferably gold, is then deposited on the wafer, ideally using e-beam evaporation. After the absorbers are patterned, the absorber and stem mask material is removed, often through a solvent bath and critical point drying.

Career Highlights

Peter C Nagler is associated with the United States of America as represented by the Administrator of NASA. His work has been instrumental in enhancing the capabilities of x-ray technology. He has dedicated his career to advancing the understanding and application of x-ray absorbers in various scientific fields.

Collaborations

Peter has collaborated with notable colleagues, including Thomas R Stevenson and Manuel A Balvin. Their combined expertise has contributed to the successful development of innovative technologies in their field.

Conclusion

Peter C Nagler's contributions to the field of x-ray absorber technology exemplify the impact of innovative thinking in scientific research. His patent and collaborative efforts continue to influence advancements in low-energy x-ray spectroscopy.