The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2018

Filed:

Sep. 29, 2016
Applicant:

The United States of America As Represented BY the Administrator of the National Aeronautics and Space Administration, Washington, DC (US);

Inventors:

Thomas R. Stevenson, Rockville, MD (US);

Manuel A. Balvin, Springfield, VA (US);

Kevin L. Denis, Crofton, MD (US);

John E. Sadleir, Washington, DC (US);

Peter C. Nagler, College Park, MD (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/115 (2006.01); H01L 31/18 (2006.01); G01N 23/083 (2018.01); G01T 1/12 (2006.01); G01T 1/36 (2006.01); H01L 39/24 (2006.01); H01L 21/027 (2006.01); G21K 1/10 (2006.01); H01L 31/08 (2006.01); G01T 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); G01N 23/083 (2013.01); G01T 1/006 (2013.01); G01T 1/36 (2013.01); G21K 1/10 (2013.01); H01L 21/027 (2013.01); H01L 31/085 (2013.01); H01L 39/24 (2013.01);
Abstract

A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask. An absorber layer, e.g., gold, is deposited on the wafer, preferably e-beam evaporated. After patterning the absorbers, absorber and stem mask material is removed, e.g., in a solvent bath and critical point drying.


Find Patent Forward Citations

Loading…