San Jose, CA, United States of America

Per-Ove Hansson

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2010.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Per-Ove Hansson: Innovating Silicon-on-Insulator Technology

Introduction:

Per-Ove Hansson, a talented inventor based in San Jose, CA, has made significant contributions to the field of silicon-on-insulator (SOI) technology. With a passion for innovation and a keen eye for detail, Per-Ove has been instrumental in developing methods for surface activation through plasma immersion ion implantation processes.

Latest Patents:

Per-Ove Hansson holds a pioneering patent titled "Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure." This patent focuses on enhancing interface bonding energy in SOI technology by cleaning the surfaces of substrates and facilitating their bonding, ultimately improving the performance and reliability of SOI structures.

Career Highlights:

Currently employed at Applied Materials, Inc., Per-Ove Hansson continues to push the boundaries of technological advancement in the semiconductor industry. His expertise in surface activation and interface bonding has garnered recognition for its innovative approach and practical applications in SOI technology.

Collaborations:

Per-Ove Hansson has collaborated with esteemed colleagues such as Randhir P S Thakur and Stephen Moffatt, leveraging their collective expertise to drive innovation and solve complex challenges in the development of cutting-edge semiconductor technologies. Through collaboration and knowledge-sharing, Per-Ove has been able to amplify the impact of his inventions and contribute to the advancement of the industry as a whole.

Conclusion:

In conclusion, Per-Ove Hansson stands as a beacon of innovation in the realm of semiconductor technology, particularly in the field of SOI structures. His dedication to refining surface activation processes and enhancing interface bonding energy reflects his commitment to excellence and progress in the industry. With a single patent already to his name, Per-Ove's future endeavors promise further breakthroughs that will undoubtedly shape the future of semiconductor technology.

Profile summary based on public USPTO records.
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