Stoneham, MA, United States of America

Pengfei Wu

This inventor holds 2 USPTO granted patents. Top assignee: Analog Devices,inc.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pengfei Wu. Retrieved from https://idiyas.com/inventor/pengfei-wu-2cbiymlp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021-2026

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2 patents (USPTO):Explore Patents

Title: Innovations of Pengfei Wu in Semiconductor Technology

Introduction

Pengfei Wu is a notable inventor based in Stoneham, MA (US), recognized for his contributions to semiconductor technology. He holds 2 patents that showcase his expertise in high-frequency transistor devices and MOSFET design. His work has significant implications for the advancement of electronic devices.

Latest Patents

One of Pengfei Wu's latest patents focuses on high-frequency heterojunction bipolar transistor devices. This patent details techniques for integrating lateral HBT devices into a silicon on insulator (SOI) CMOS process. The approaches described could also be applied to Fin Field-Effect Transistors (FinFETs). The first technique utilizes a CMOS replacement gate process, typically associated with partially depleted SOI (PDSOI) or fully depleted SOI (FDSOI) processes. The second technique is independent of the CMOS process and can accommodate silicon germanium (SiGe) and/or III-V materials. Both techniques include a self-aligned base contact and can be used to construct both NPN and PNP transistors with varied peak fT and breakdown voltages.

Another significant patent by Wu involves a heavily doped buried layer designed to reduce MOSFET off capacitance. This invention describes a metal-oxide semiconductor field effect transistor (MOSFET) that includes a source region and a drain region of a first conductivity type. The MOSFET also features a body region of a second conductivity type, which underlies at least a portion of the source and drain regions. The buried region of the first conductivity type is configured to reduce capacitance between the source and drain regions in response to an indicated voltage applied between the body region and the buried region.

Career Highlights

Pengfei Wu is currently employed at Analog Devices, Inc., where he continues to innovate in the field of semiconductor technology. His work has contributed to the development of advanced electronic components that enhance device performance and efficiency.

Collaborations

Throughout his career, Wu has collaborated with notable colleagues, including Susan L. Feindt and F. Jacob Steigerwald. These collaborations have fostered an environment of innovation and have led to significant advancements in their respective fields.

Conclusion

Pengfei Wu's contributions to semiconductor technology through his patents and work at Analog Devices, Inc. highlight his role as a leading inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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