This inventor holds 1 USPTO granted patent and 2 published patent applications and 1 EPO patent. Top assignee: No. 24 Research Institute of China Electronics Technology Group Corporation. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Pengfei Wang - Innovator in MOS Device Technology
Introduction
Pengfei Wang is a notable inventor based in Chongqing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS devices. His innovative approach has led to advancements that enhance the performance and efficiency of these devices.
Latest Patents
Wang holds a patent for a "MOS device with resistive field plate for realizing conductance modulation field effect and preparation method thereof." This invention builds upon existing trench gate MOS devices by incorporating a semi-insulating resistive field plate. This plate is electrically connected to both the trench gate structure and the drain structure within the drift region. The trench gate structure effectively controls the on-off state of the MOS channel, while the resistive field plate adjusts the doping concentration of the drift region. This modulation allows for a lower on-resistance and improves the distribution of the off-state high-voltage blocking electric field. The use of modern 2.5-dimensional processing technology based on deep trench etching further supports the miniaturization and high-density design of the structure, aligning with the More than Moore development in integrated semiconductor devices.
Career Highlights
Pengfei Wang is affiliated with the No. 24 Research Institute of China Electronics Technology Group Corporation. His work at this institute has positioned him as a key player in the advancement of electronic technologies. His innovative contributions have garnered attention within the industry.
Collaborations
Wang has collaborated with notable colleagues, including Hequan Jiang and Tian Xiao. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Pengfei Wang's contributions to MOS device technology exemplify the spirit of innovation in the semiconductor industry. His patent reflects a significant advancement that could influence future developments in electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile