Pengchong Li

Title: Innovations of Pengchong Li in Semiconductor Technology

Introduction

Pengchong Li is a notable inventor based in Shanghai, China, recognized for his contributions to semiconductor technology. He holds two patents that showcase his innovative methods for forming semiconductor structures. His work is pivotal in enhancing the performance and reliability of semiconductor devices.

Latest Patents

Pengchong Li's latest patents include a method for forming a semiconductor structure. This method involves providing a base, a dummy gate structure, a source-drain doped region, and an interlayer dielectric layer. The process includes removing the dummy gate structure to form an isolation opening, performing ion doping on a fin below the isolation opening, and filling the isolation structure. This innovation improves the potential energy barrier of a P-N junction, preventing conduction current in the fin of the isolation region during device operation.

Another significant patent is a semiconductor structure and a method for forming the same. This method also includes providing a base, a gate structure, and a source-drain doping region. The process involves removing the gate structure to form an isolation opening, performing ion-doping on the fin, and filling the isolation opening with an isolation structure. This approach enhances the barrier of the P-N junction, ensuring effective isolation between regions without the need for a fin cut process.

Career Highlights

Pengchong Li has worked with prominent companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has contributed significantly to his expertise in semiconductor technology.

Collaborations

Some of his notable coworkers include Xuejie Shi and Hansu Oh, who have collaborated with him on various projects in the semiconductor field.

Conclusion

Pengchong Li's innovative patents and career in semiconductor technology highlight his significant contributions to the field. His work continues to influence advancements in semiconductor structures and methods.