Company Filing History:
Years Active: 2025
Title: Pengan Yin - Innovator in 3D Memory Technology
Introduction
Pengan Yin is a notable inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly with his innovative designs in three-dimensional (3D) memory devices. His work is recognized for its potential to enhance data storage solutions.
Latest Patents
Pengan Yin holds a patent for a 3D memory device. This invention includes a peripheral wafer and an array wafer. The peripheral wafer consists of a first peripheral structure and a second peripheral structure. The array wafer features a substrate, a structure to be tested, and multiple interconnecting portions. The substrate is divided into a first well region and a second well region. The structure to be tested includes a first connecting portion, a second connecting portion, and multiple interconnecting portions. The first peripheral structure connects to the first well region and the first connecting portion of the structure to be tested through the first and second interconnecting portions. Similarly, the second peripheral structure connects to the second well region and the second connecting portion of the structure to be tested via the third and fourth interconnecting portions.
Career Highlights
Pengan Yin is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to further develop his innovative ideas and contribute to advancements in memory technology. His expertise in this area has positioned him as a key figure in the industry.
Collaborations
Pengan Yin collaborates with Lan Yao, who is also involved in the field of memory technology. Their partnership enhances the research and development efforts at Yangtze Memory Technologies Co., Ltd.
Conclusion
Pengan Yin's contributions to 3D memory technology exemplify the innovative spirit of modern inventors. His patent for a 3D memory device showcases his commitment to advancing data storage solutions. Through his work, he continues to influence the future of memory technology.