Suzhou, China

Peipei Dong

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Umicore Suzhou Semiconductor Materials Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peipei Dong. Retrieved from https://idiyas.com/inventor/peipei-dong-2tsv90ld

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Peipei Dong and Nanograined Copper Electroplating

Introduction

Peipei Dong is an inventor associated with Suzhou, China, and Umicore Suzhou Semiconductor Materials Co., Ltd. Her patent work focuses on producing nanograined copper through an electroplating process.

Latest Patents

Dong is credited with 1 patent: “Method for Electroplating Nanograined Copper.” The method electroplates a substrate at room temperature using a bath containing a copper salt, acid, leveler, chlorine compound, accelerator, suppressor, and water. It specifies a polyether polyol compound as the suppressor and describes copper with an average grain size of about 100 nanometers and a resistivity of about 1.78–1.90 μΩ·cm. The patent also discloses nanograined copper prepared using the method.

Career Highlights

Dong’s listed patent connects her work at Umicore Suzhou Semiconductor Materials Co., Ltd. with materials processing for semiconductor applications. The invention’s stated process and material properties are central features of the patent.

Collaborations

Yun Zhang and Jing Wang are identified as Dong’s coworkers. The available information does not specify their roles in the patent or whether they collaborated on the invention.

Conclusion

Peipei Dong’s patent describes a room-temperature electroplating method for producing nanograined copper with specified grain size and resistivity, reflecting her documented work in semiconductor materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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