Pei-Shan Lee

Title: Pei-Shan Lee: Innovator in Semiconductor Technology

Introduction

Pei-Shan Lee is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to manufacturing semiconductor devices.

Latest Patents

Pei-Shan Lee's latest patents include a method of manufacturing a semiconductor device and the semiconductor device itself. The semiconductor device features semiconductor wires or sheets positioned over a substrate, a source/drain epitaxial layer in contact with these wires or sheets, and a gate dielectric layer that wraps around each channel region. Additionally, a gate electrode layer is placed on the gate dielectric layer, and insulating spacers are strategically positioned in the defined spaces. The source/drain epitaxial layer consists of multiple doped SiGe layers with varying Ge contents, with at least one layer being non-doped SiGe or Si.

Career Highlights

Pei-Shan Lee is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing semiconductor manufacturing processes and enhancing device performance.

Collaborations

Pei-Shan has collaborated with notable colleagues, including Shahaji B More and Shih-Chieh Chang, contributing to a dynamic and innovative work environment.

Conclusion

Pei-Shan Lee's contributions to semiconductor technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as a key innovator in the field. His advancements continue to influence the development of semiconductor devices.