Rexford, NY, United States of America

Pei Liu

This inventor holds 2 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pei Liu. Retrieved from https://idiyas.com/inventor/pei-liu-j4qo0j05

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Pei Liu: Innovator in Semiconductor Technology

Introduction

Pei Liu is a notable inventor based in Rexford, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of electrical contact structures.

Latest Patents

Pei Liu holds a patent for an "Electrical contact cavity structure and methods of forming the same." This innovative method involves forming an electrical contact in a semiconductor structure by performing a cavity shaping process on semiconductor structures that include n-type metal oxide semiconductor (n-MOS) and p-type MOS (p-MOS) regions. The process enhances the surface area of the exposed surfaces of these regions, thereby improving their functionality.

Career Highlights

Pei Liu is currently employed at Applied Materials, Inc., where he continues to advance semiconductor technologies. His work focuses on enhancing the efficiency and performance of semiconductor devices through innovative design and engineering solutions.

Collaborations

Pei Liu has collaborated with talented colleagues such as Nicolas L Breil and Lisa Mcgill, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Pei Liu's contributions to semiconductor technology exemplify the impact of innovative thinking in the field. His patent and ongoing work at Applied Materials, Inc. highlight his commitment to advancing technology for better performance in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…