The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Sep. 17, 2024
Applied Materials, Inc., Santa Clara, CA (US);
Nicolas Louis Breil, San Jose, CA (US);
Lisa McGill, Hillsboro, OR (US);
Manoj Vellaikal, Sunnyvale, CA (US);
Bocheng Cao, Sunnyvale, CA (US);
Pei Liu, Rexford, NY (US);
Avgerinos V. Gelatos, Scotts Valley, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and/or a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and/or a p-MOS cavity in an exposed surface of the p-MOS region, wherein the cavity shaping process is configured to increase the surface area of the exposed surface of the n-MOS region or the p-MOS region. In some embodiments, the method includes performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.