Tainan, Taiwan

Pei-Hsiu Tseng


Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Taoyuan, TW (2020)
  • Tainan, TW (2022 - 2024)

Company Filing History:


Years Active: 2020-2024

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4 patents (USPTO):Explore Patents

Title: Pei-Hsiu Tseng: An Innovator in SRAM Technology

Introduction

Pei-Hsiu Tseng is a notable inventor based in Tainan, Taiwan, recognized for his contributions to the field of semiconductor technology. With a portfolio of four patents, Tseng has made significant advancements in the manufacturing methods of SRAM (Static Random-Access Memory) devices. His innovative approaches are influencing the efficiency and efficacy of memory device production.

Latest Patents

Tseng's latest patents focus on enhancing the manufacturing processes of SRAM devices. The first patent describes a comprehensive manufacturing method that entails forming two transistors on a substrate, followed by the creation of an inner dielectric layer and the formation of contacts for coupling to the source nodes of the transistors. The design includes a metal interconnect structure where part of the n-th metal layer serves as a lower metal layer to support the capacitor structure formed within an opening of the metal interconnect.

In another related patent, he details the structure of an SRAM memory device, which incorporates two transistors, a metal interconnect structure, and a well-designed capacitor. This capacitor plays a crucial role in linking the two transistors effectively, enhancing the operational efficiency of SRAM devices. The patents represent Tseng's commitment to developing advanced manufacturing techniques that push the boundaries of current technology.

Career Highlights

Pei-Hsiu Tseng is currently associated with Powerchip Semiconductor Manufacturing Corporation, where he actively contributes to the advancement of semiconductor technologies. His expertise and experience in the sector have been instrumental in driving forward innovative solutions that address contemporary challenges faced in memory device manufacturing.

Collaborations

Throughout his career, Tseng has worked alongside talented colleagues, including Jia-You Lin and Shou-Zen Chang. The collaborative efforts among these individuals have fostered a robust environment for innovation, resulting in significant contributions to the field of semiconductors.

Conclusion

In summary, Pei-Hsiu Tseng stands out as a prominent inventor in the semiconductor industry, specifically in the domain of SRAM technology. His recent patents reflect a deep understanding of manufacturing processes and the application of advanced techniques. As the industry continues to evolve, Tseng's contributions will undoubtedly play a vital role in shaping the future of memory devices.

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