Munich, Georgia

Peerayut Khongsab


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovations of Peerayut Khongsab in Obstacle Identification Technology.

Introduction

Peerayut Khongsab is a notable inventor based in Munich, Germany. He has made significant contributions to the field of obstacle identification technology. His innovative approach has led to the development of a unique device that enhances the identification of obstacles in various environments.

Latest Patents

Peerayut Khongsab holds a patent for a "Device for providing improved obstacle identification." This device utilizes two cameras to acquire vehicle image data, which is then processed to identify obstacles effectively. The first camera captures the first vehicle image data, while the second camera captures the second vehicle image data. The processing unit plays a crucial role in extracting image features and projecting them onto the ground plane. This technology aims to produce a comprehensive image of the surroundings, improving safety and navigation.

Career Highlights

Peerayut Khongsab is currently employed at Conti Temic Microelectronic GmbH, where he continues to innovate in the field of microelectronics and obstacle detection. His work has been instrumental in advancing technologies that enhance vehicle safety and efficiency. With a patent portfolio that includes 1 patent, he demonstrates a commitment to pushing the boundaries of technology.

Collaborations

Peerayut has collaborated with talented coworkers such as Sudhan Dhana Sekaran and Joerg Schrepfer. Their combined expertise contributes to the success of their projects and the advancement of their technological innovations.

Conclusion

Peerayut Khongsab's contributions to obstacle identification technology reflect his dedication to innovation and safety. His work at Conti Temic Microelectronic GmbH and his patented inventions are paving the way for future advancements in this critical field.

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