Company Filing History:
Years Active: 1989-1990
Title: Paulus Z Van Der Putte: Innovator in Semiconductor Technology
Introduction
Paulus Z Van Der Putte is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of semiconductor technology, particularly in the area of metallization processes for MOS devices. With a total of two patents to his name, his work has had a lasting impact on the industry.
Latest Patents
His latest patents focus on self-aligned metallization for semiconductor devices. The process involves selectively depositing a first layer of tungsten on the exposed silicon surfaces of the device, including the source, drain, and gate regions. A layer providing nucleation sites for tungsten is formed across insulating oxide regions, followed by the selective deposition of a second tungsten layer. This innovative approach not only reduces electrical resistivity but also allows for relaxed mask alignment and etching tolerance requirements, making it particularly useful in very-large-scale integration (VLSI) circuits.
Career Highlights
Throughout his career, Paulus has worked with several prominent companies, including North American Philips Corporation and Signetics Division. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Paulus has collaborated with notable coworkers such as Janet M Flanner and Janet M DeBlasi. Their joint efforts have further advanced the field of semiconductor devices.
Conclusion
Paulus Z Van Der Putte is a distinguished inventor whose work in semiconductor technology has paved the way for advancements in VLSI circuits. His innovative patents and collaborations highlight his significant contributions to the industry.