This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Paul-Werner Basse: Innovator in Memory Cell Technology
Introduction
Paul-Werner Basse is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, particularly in memory cell configurations. His innovative work has led to advancements in how memory cells are designed and operated.
Latest Patents
One of Paul-Werner Basse's key patents is titled "Memory cell configuration, method for fabricating it and methods for operating it." This patent describes a memory cell configuration that includes a multiplicity of memory cells within a semiconductor substrate. Each memory cell features a selection transistor that connects a bit line to a storage element. The configuration allows for driving the memory cells via two intersecting word lines, making it particularly applicable to DRAM configurations. This invention showcases his expertise in enhancing memory technology.
Career Highlights
Throughout his career, Paul-Werner Basse has been associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has positioned him as a key player in the development of advanced memory technologies. His contributions have not only advanced the company's portfolio but have also influenced the broader semiconductor industry.
Collaborations
Paul-Werner Basse has collaborated with esteemed colleagues such as Lothar Risch and Franz Hofmann. These partnerships have fostered an environment of innovation and have led to the successful development of cutting-edge technologies in the field of memory cells.
Conclusion
In summary, Paul-Werner Basse is a distinguished inventor whose work in memory cell technology has made a lasting impact on the semiconductor industry. His innovative patent and collaborations highlight his commitment to advancing technology in this critical field.