This inventor holds 1 USPTO granted patent. Top assignee: Lsi Logic Corporation. Active years: 1999.
Company Filing History:
Years Active: 1999
Title: Paul Neary - Innovator in Semiconductor Technology
Introduction
Paul Neary is a notable inventor based in Mountain View, CA (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for controlling threshold voltage in MOSFET devices.
Latest Patents
Neary holds a patent titled "Method for artificially-inducing reverse short-channel effects in deep." This invention comprises a method for controlling a threshold voltage through a semiconductor substrate of a first conductivity type, which can be either n-type or p-type in a MOSFET. The method eliminates the need for a blanket implant for both long and short channel devices. A gate structure with opposed lateral edges is formed adjacent to the surface of the semiconductor substrate over a channel region. The substrate is rotated around a rotation axis normal to the surface to a first rotation position. Ions of the first conductivity type are implanted into the channel region using the gate structure as a mask at an oblique angle relative to the surface normal. The substrate is then rotated to a second position approximately 180 degrees from the first, allowing for further ion implantation.
Career Highlights
Paul Neary has worked with LSI Logic Corporation, where he has been able to apply his expertise in semiconductor technology. His work has contributed to advancements in the efficiency and performance of semiconductor devices.
Collaborations
Neary has collaborated with Lindor Eric Henrickson, enhancing the development of innovative solutions in the semiconductor field.
Conclusion
Paul Neary's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of efficient semiconductor devices.