The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
Dec. 05, 1996
Paul Neary, Mountain View, CA (US);
Lindor E Henrickson, San Jose, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
The present invention comprises a method for controlling a threshold voltage through a semiconductor substrate of a first conductivity type (the type being an n- or p- type in a MOSFET) without the need for a blanket implant for either long or short channel devices. A gate structure having opposed lateral edges is formed adjacent a surface of the semiconductor substrate and over a channel region of the substrate. The substrate is rotated around a rotation axis normal to the surface of the substrate to a first rotation position. Ions of a first conductivity type are then implanted into the channel region, using the gate structure as a mask, at an oblique angle relative to the surface normal of the substrate. The substrate is then rotated to a second rotation position approximately 180 degrees from the first rotation position. Ions of the first conductivity type are then implanted into the channel region, using the gate structure as a mask, at the oblique angle relative to the surface of the substrate.