Paul J Marcoux

Title: Paul J Marcoux: Innovator in Semiconductor Technology

Introduction

Paul J Marcoux is a notable inventor based in Mountain View, CA, who has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on improving the efficiency and performance of integrated circuits.

Latest Patents

Marcoux's latest patents include a "Method for making patterned implanted buried oxide transistors" and "A method for producing buried oxide layers in selected portions of a semiconductor substrate." The first patent describes a process that involves applying a patterned mask made from high-density materials, such as tungsten, over a semiconductor substrate. This method allows for the selective formation of buried oxide layers through oxygen ion implantation, resulting in MOS transistors with reduced drain and source capacitance, minimized leakage, and enhanced response times. The second patent outlines a technique for fabricating conductors in integrated circuits, enabling the creation of fine line conductors through a patterned photoresist layer and subsequent etching processes.

Career Highlights

Marcoux is currently associated with Hewlett-Packard Company, where he continues to innovate in the semiconductor space. His work has been instrumental in advancing the capabilities of integrated circuits, making them more efficient and reliable.

Collaborations

Throughout his career, Marcoux has collaborated with esteemed colleagues such as Theodore I Kamins and Jean-Pierre Colinge, further enhancing the impact of his inventions in the industry.

Conclusion

Paul J Marcoux stands out as a key figure in semiconductor innovation, with his patents reflecting a commitment to advancing technology in this critical field. His contributions continue to influence the development of more efficient electronic devices.