Hewlett-packard Company

Paul J Marcoux

Theodore I Kamins

John L Moll

Jean-Pierre Colinge

Eileen M Murray

Hugh R Grinolds

Lynn M Roylance

A method for producing buried oxide layers in selected portions of a semiconductor substrate including the steps of applying a patterned mask made from a high-density material over a semiconductor substrate and selectively forming buried oxide layers by oxygen ion implantation. The high-density material of the mask is preferably tungsten, but can also be made from other suitable materials such as silicon nitride. A MOS transistor is made by the process of the present invention by applying the high-density mask material over the gate of the transistor, and forming buried oxide layers by ion implantation beneath only the source region and drain region of the transistor. The completed MOS transistor has the characteristics of reduced drain and source capacitance, reduced leakage, and faster response, but does not suffer from the floating-body effect of MOS transistors made by SOI processes.

Method for making patterned implanted buried oxide transistors and

A technique of patterning a conductive layer for interconnections in integrated circuits is disclosed. The technique enables fine line conductors to be fabricated. In accordance with the invention, a pattern for the conductors is etched into the surface of a substrate through the use of a patterned photoresist layer. The conductive layer is then deposited over the photoresist layer and into the pattern etched into the substrate surface. In intervening steps, only the portions of the conductive layer outside the depression of the pattern in the surface are removed; the portions of the conductive layer within the depression remains intact to provide the pattern of fine line conductors desired.

Method for fabricating conductors in integrated circuits

Growing community of inventors

Mountain View, CA, United States of America

Paul J Marcoux