Paul Gerrard

Title: Paul Gerrard - Innovator in Semiconductor Technology

Introduction

Paul Gerrard is a notable inventor based in Didsbury, Manchester, GB. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance device performance.

Latest Patents

Gerrard holds a patent for a termination structure for a semiconductor device. This invention involves a semiconductor device, such as a MOSFET or IGBT, which comprises active and termination regions formed in a semiconductor substrate. The substrate features an upper surface and a termination that includes a trench extending into the substrate from the upper surface within the termination region. The termination trench is at least partly filled with an insulating material that extends from the trench to overlie adjacent regions of the device above the surface. Additionally, a channel stop region extends laterally from a side wall of the termination trench into the substrate.

Career Highlights

Paul Gerrard is associated with Zetex Plc, where he has contributed to various projects and advancements in semiconductor technology. His work has been instrumental in developing efficient and reliable semiconductor devices.

Collaborations

Gerrard has collaborated with notable colleagues, including Peter Blair and Adrian David Finney, to further enhance the innovations in their field.

Conclusion

Paul Gerrard's contributions to semiconductor technology through his patent and work at Zetex Plc highlight his role as an influential inventor in the industry. His innovative designs continue to impact the development of advanced semiconductor devices.