The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Oct. 15, 2002
Peter Blair, Urmston Manchester, GB;
Adrian Finney, Chadderton Oldham, GB;
Paul Gerrard, Didsbury Manchester, GB;
Andrew Wood, Brabury Stuckport, GB;
David Mottram, Shay Oldham, GB;
Peter Blair, Urmston Manchester, GB;
Adrian Finney, Chadderton Oldham, GB;
Paul Gerrard, Didsbury Manchester, GB;
Andrew Wood, Brabury Stuckport, GB;
David Mottram, Shay Oldham, GB;
Zetex PLC, , GB;
Abstract
A semiconductor device (e.g. MOSFET or IGBT) comprises active and termination regions () formed in a semiconductor substrate (). The substrate () has an upper surface and a termination including a trench () extending into the substrate () from the upper surface within the termination region (). Termination trench () is at least partly filled with an insulating material () which extends from the termination trench () to overlie adjacent regions of the device above the surface. A channel stop region () extends laterally from a side wall of the termination trench () into the substrate ().