Plano, TX, United States of America

Paul C Mannas

This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 2009.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Paul C Mannas: Innovator in Semiconductor Design

Introduction

Paul C Mannas is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of semiconductor design, particularly through his innovative methodologies. His work focuses on enhancing the validation processes of semiconductor design layouts.

Latest Patents

Paul C Mannas holds a patent for an "Edge recognition based high voltage pseudo layer verification methodology for mixed signal design layout." This patent discloses a method for validating at least some aspects of a proposed semiconductor design layout. The invention applies a first voltage-dependent design rule to an edge of an area of the layout if the edge is not covered by a pseudo layer. Conversely, a second voltage-dependent design rule is applied to the edge of the area if it is covered by the pseudo layer. This innovative approach aims to improve the accuracy and reliability of semiconductor designs.

Career Highlights

Paul C Mannas is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His role at Texas Instruments allows him to apply his expertise in semiconductor design and contribute to the development of cutting-edge technologies.

Collaborations

Throughout his career, Paul has collaborated with talented professionals, including Lily Springer and Haim Horovitz. These collaborations have likely enriched his work and contributed to the success of his projects.

Conclusion

In summary, Paul C Mannas is a distinguished inventor whose work in semiconductor design has led to innovative methodologies that enhance validation processes. His contributions continue to impact the field positively.

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