Company Filing History:
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Years Active: 2002
Title: Paul C Buschner: Innovator in Semiconductor Technology
Introduction
Paul C Buschner is a notable inventor based in Colchester, Vermont, with a focus on semiconductor technology. He holds 2 patents that contribute significantly to the field of silicon trench isolation and high-density DRAM cells. His innovative approaches have paved the way for advancements in semiconductor fabrication processes.
Latest Patents
One of his latest patents is titled "AB etch endpoint by ABFILL compensation." This method determines the AB etch endpoint during a silicon trench isolation fabrication process. It requires the introduction of a sufficient quantity of "dummy" diffusion structures into the STI design. These structures provide a strong endpoint signal during normal STI fabrication, which can be controlled by adjusting the planarization shapes associated with the dummy diffusion structures.
Another significant patent is the "Self-aligned trench capacitor capping process for high density DRAM cells." This process eliminates roughness on a silicon nitride trench liner. A capping film is formed in a self-aligned manner on the top of the trench, preventing short circuits between a storage node and a passing word-line.
Career Highlights
Throughout his career, Paul has worked with prominent companies such as IBM and Kabushiki Kaisha Toshiba. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.
Collaborations
Paul has collaborated with notable colleagues, including Timothy G Dunham and Howard Smith Landis. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.
Conclusion
Paul C Buschner is a distinguished inventor whose contributions to semiconductor technology have made a lasting impact. His patents reflect his commitment to advancing the field and improving fabrication processes. His work continues to influence the industry and inspire future innovations.