International Business Machines Corporation

Kabushiki Kaisha Toshiba

Paul C Buschner

Hirofumi Inoue

Howard Smith Landis

Max Gerald Levy

Masami Aoki

Bruce Walter Porth

Timothy G Dunham

Victor R Nastasi

Emily E Fisch

A method for determining the AB etch endpoint during an silicon trench isolation fabrication process requires the introduction into the STI design a sufficient quantity of &ldquo;dummy&rdquo; diffusion structures that provide a strong endpoint signal during normal STI fabrication and, that which endpoint signal may be controlled by adjustment of the planarization shapes associated with the dummy diffusion structures.

AB etch endpoint by ABFILL compensation

A process for eliminating roughness on a silicon nitride trench liner is disclosed. A capping film on the top of the trench is formed in a self-aligned manner. This capping film prevents short circuits between a storage node and a passing word-line.

Self-aligned trench capacitor capping process for high density DRAM cells

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Colchester, VT, United States of America

Paul C Buschner