The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2002

Filed:

Jul. 15, 1999
Applicant:
Inventors:

Paul C. Buschner, Colchester, VT (US);

Timothy G. Dunham, So. Burlington, VT (US);

Howard S. Landis, Underhill, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract

A method for determining the AB etch endpoint during an silicon trench isolation fabrication process requires the introduction into the STI design a sufficient quantity of “dummy” diffusion structures that provide a strong endpoint signal during normal STI fabrication and, that which endpoint signal may be controlled by adjustment of the planarization shapes associated with the dummy diffusion structures.


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