San Francisco, CA, United States of America

Patriz C Regalado

This inventor holds 1 USPTO granted patent. Top assignees: Advanced Micro Devices Corporation, Spansion LLC.. Active years: 2007.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2007

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Patriz C Regalado

Introduction

Patriz C Regalado is a notable inventor based in San Francisco, CA. He has made significant contributions to the field of memory array fabrication processes. His innovative approach has led to the development of a unique method that enhances the control of polysilicon thickness and uniformity.

Latest Patents

Regalado holds a patent for a "Method for controlling poly 1 thickness and uniformity in a memory array fabrication process." This patent outlines a method that includes planarizing a layer of polysilicon situated over field oxide regions on a substrate. The process ensures that the polysilicon segments have top surfaces that are substantially planar with the top surfaces of the field oxide regions. The method also involves etching the polysilicon segments to achieve a desired thickness, which is crucial for the performance of memory arrays.

Career Highlights

Throughout his career, Regalado has worked with prominent companies in the technology sector. He has been associated with Advanced Micro Devices Corporation and Spansion LLC, where he contributed to various innovative projects. His work has been instrumental in advancing memory technology.

Collaborations

Regalado has collaborated with talented individuals in his field, including Kashmir S Sahota and Krishnashree Achuthan. These collaborations have fostered an environment of innovation and creativity, leading to advancements in technology.

Conclusion

Patriz C Regalado's contributions to the field of memory array fabrication are noteworthy. His innovative methods and collaborations have significantly impacted the technology landscape. His work continues to inspire future advancements in the industry.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…