The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Jan. 13, 2005
Krishnashree Achuthan, San Ramon, CA (US);
Unsoon Kim, San Jose, CA (US);
Kashmir Sahota, Fremont, CA (US);
Patriz C. Regalado, San Francisco, CA (US);
Krishnashree Achuthan, San Ramon, CA (US);
Unsoon Kim, San Jose, CA (US);
Kashmir Sahota, Fremont, CA (US);
Patriz C. Regalado, San Francisco, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a method includes planarizing a layer of polysilicon situated over field oxide regions on a substrate to form polysilicon segments, where the polysilicon segments have top surfaces that are substantially planar with top surfaces of the field oxide regions, and where the field oxide regions have a first height and the polysilicon segments have a first thickness. The method further includes removing a hard mask over a peripheral region of the substrate. According to this exemplary embodiment, the method further includes etching the polysilicon segments to cause the polysilicon segments to have a second thickness, which causes the top surfaces of the polysilicon segments to be situated below the top surfaces of the field oxide regions. The polysilicon segments can be etched by using a wet etch process. The polysilicon segments are situated in a core region of the substrate.