Company Filing History:
Years Active: 2020
Title: The Innovative Mind of Patrick T. Heres
Introduction
Patrick T. Heres, based in Boxford, Massachusetts, is an accomplished inventor known for his contributions to the field of ion implantation systems. With a focus on enhancing the efficiency and precision of ion beam production, Heres has made significant strides in ion source technology.
Latest Patents
Heres holds a patent for an invention titled "Ion Source with Tailored Extraction Shape." This innovative ion implantation system includes an ion source designed to create a high-density concentration of ions within an arc chamber housing. The extraction member of the system contains a uniquely designed aperture that modifies the ion beam profile, producing a substantially uniform beam current. The extraction aperture takes on the form of an elongated slit with varying widths, featuring wide ends and a narrow middle, thereby optimizing the ion beam's performance for various applications.
Career Highlights
Throughout his career, Patrick T. Heres has been associated with Axcelis Technologies, Inc., where his expertise has been a crucial part of the company’s advancements in semiconductor manufacturing technologies. His work emphasizes the importance of precision in ion implantation processes, setting new industry standards.
Collaborations
Heres has collaborated with several industry experts, including his coworker Denis A. Robitaille, to develop innovative solutions within the semiconductor technology sphere. Their combined efforts focus on improving the efficiency of ion sources and enhancing the overall functionality of ion implantation systems.
Conclusion
Patrick T. Heres exemplifies the spirit of innovation that drives advancements in technology. With his patented invention and ongoing contributions at Axcelis Technologies, he continues to influence the landscape of ion implantation, ensuring that future developments in this critical area of semiconductor manufacturing are precise and efficient.