The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Dec. 12, 2018
Axcelis Technologies Inc., Beverly, MA (US);
Patrick T. Heres, Boxford, MA (US);
Denis A. Robitaille, Ipswich, MA (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
An ion implantation system including an ion source for use in creating an ion beam is disclosed. The ion source has an ion source arc chamber housing that confines a high density concentration of ions within the chamber housing. An extraction member defining an appropriately configured extraction aperture allows ions to exit the source arc chamber. In a preferred embodiment, the extraction member defines a tailored extraction aperture shape for modifying an ion beam profile and producing a substantially uniform beam current across a dimension of the ion beam. The extraction aperture member defines an aperture in the form of an elongated slit having a width that varies, with wide ends and a narrow middle. The midsection of the extraction aperture has a narrower width than the opposite end sections. The tailored shape of the extraction aperture includes a central portion having a first width dimension, and first and second distal portions extending from opposite sides of the central portion, the opposed distal portions having a second width dimension that is greater than the first width dimension of the central portion.