This inventor holds 3 USPTO granted patents. Top assignee: U.S. Philips Corporation. Active years: 1989-1990.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1989-1990
Title: Patrick D Rabinzohn: Innovator in Semiconductor Technology
Introduction
Patrick D Rabinzohn is a notable inventor based in Saint Maurice, France. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on the development of advanced transistors and semiconductor devices.
Latest Patents
Rabinzohn's latest patents include a method of manufacturing a field effect transistor. This invention involves a unique approach to creating a transistor with a Schottky gate electrode and self-aligned source and drain regions. Another significant patent is for a method of manufacturing a hetero-junction bipolar transistor, particularly using gallium arsenide. This method emphasizes the formation of superimposed epitaxial layers and precise openings for emitter contact regions.
Career Highlights
Patrick D Rabinzohn is associated with U.S. Philips Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative methods have paved the way for more efficient and effective electronic components.
Collaborations
Rabinzohn has collaborated with notable colleagues such as Christian Rocher and Serge Gourrier. Their combined expertise has contributed to the success of various projects within the semiconductor industry.
Conclusion
Patrick D Rabinzohn's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in electronic devices and systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile